advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 60v fast switching speed r ds(on) 50m pdip-8 package i d 5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 continuous drain current 3 , v gs @ 10v 3.2 pulsed drain current 1 20 gate-source voltage + 25 continuous drain current 3 , v gs @ 10v 5 parameter rating drain-source voltage 60 1 AP9971AGD rohs-compliant product 200809222 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g2 d2 s2 g1 d1 s1 d1 d1 d2 d2 s1 g1 s2 g2 pdip-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 50 m ? ? ,
ap9971ag d fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =4.0v 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 4 8 12 16 20 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 7.0v 5.0v 4.5v v g =4.0v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =5a 30 40 50 60 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap9971ag d 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz ciss crss coss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =5a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty foctor=0.5 single pulse
package outline : pdip-8 millimeters min nom max a 3.60 4.50 5.40 a1 0.38 ---- ---- a2 2.90 3.95 5.00 b 0.36 0.46 0.56 b1 1.10 1.45 1.80 b2 0.76 0.98 1.20 c 0.20 0.28 0.36 d 9.00 9.60 10.20 e 6.10 6.65 7.20 e1 7.62 7.94 8.26 e2 8.30 9.65 11.00 e l 3.18 ---- ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. ?? part marking information & packing : pdip-8 2.540 bsc symbol s advanced power electronics corp. date code (ywwsss) y last digit of the year ww week sss sequence package code part numbe r e d a e b1 b l a2 c e1 e2 a1 b2 meet rohs requirement for low voltage mosfet only 9971agd ywwsss 5
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